改代码能够计算GaN_InN 量子阱内的能带结构，该体系为拓扑绝缘体体系，能够计算基本的 能带结构，电子密度分布，边沿态等。 参看文献： [1]. Dan M, Hu G, Li L, et al. High Performance Piezotronic Logic Nanodevices Based on GaN/InN/GaN Topological Insulator[J]. Nano Energy, 2018. [2]. Miao M S, Yan Q, Van de Walle C G, et al. Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well[J]. Physical review letters, 2012, 109(18): 186803.
资源文件列表
edge_state_GaN_InN.m , 1968
band_structure_GaN_InN.m , 1750
band_structure_GaN_InN_TB.m , 1237